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Si5513CDC
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D = - 250 μA
I D = 250 μA
I D = - 250 μA
I D = 250 μA
I D = - 250 μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
- 20
23.7
- 19.5
- 3.5
2.8
V
mV/°C
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 12 V
N-Ch
P-Ch
N-Ch
P-Ch
0.6
- 0.6
1.5
- 1.5
100
- 100
V
nA
V DS = 20 V, V GS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I DSS
V DS = - 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 55 °C
P-Ch
N-Ch
-1
10
μA
V DS = - 20 V, V GS = 0 V, T J = 55 °C
P-Ch
- 10
On-State Drain Current b
I D(on)
V DS ≥ 5 V, V GS = 4.5 V
V DS ≤ - 5 V, V GS = - 4.5 V
V GS = 4.5 V, I D = 4.4 A
N-Ch
P-Ch
N-Ch
10
-8
0.045
0.055
A
Drain-Source On-State Resistance b
R DS(on)
V GS = - 4.5 V, I D = - 2.4 A
V GS = 2.5 V, I D = 3.6 A
P-Ch
N-Ch
0.120
0.065
0.150
0.085
Ω
V GS = - 2.5 V, I D = - 1.9 A
P-Ch
0.204
0.255
Forward Transconductance b
g fs
V DS = 10 V, I D = 4.4 A
V DS = - 10 V, I D = - 2.4 A
N-Ch
P-Ch
12
5
S
Dynamic a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C iss
C oss
C rss
Q g
N-Channel
V DS = 10 V, V GS = 0 V, f = 1 MHz
P-Channel
V DS = - 10 V, V GS = 0 V, f = 1 MHz
V DS = 10 V, V GS = 5 V, I D = 4.4 A
V DS = - 10 V, V GS = - 5 V, I D = - 2.4 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
285
252
65
62
30
45
2.8
3.9
2.6
4.2
5.6
3.9
pF
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
N-Channel
V DS = 10 V, V GS = 4.5 V, I D = 4.4 A
P-Channel
V DS = - 10 V, V GS = - 4.5 V, I D = - 2.4 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
3.6
0.7
0.6
0.5
1.2
5.4
nC
Gate Resistance
R g
f = 1 MHz
N-Ch
P-Ch
0.6
1.3
3
6.5
6
13
Ω
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2
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10
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